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| Data Sheet No. 2C3960 Chip Type 2C3960 Geometry 0003 Polarity NPN Generic Packaged Part: 2N3960 Chip type 2C3960 by Semicoa Semiconductors provides performance similar to these devices. Part Numbers: Product Summary: APPLICATIONS: Designed for high-speed current-mode logic switching. Features: 2N3960, 2N3960UB, SD3960F, SQ3960, SQ3960F Mechanical Specifications Metallization Bonding Pad Size Die Thickness Chip Area Top Surface Top Backside Emitter Base Al - 15 kA min. Au - 6.5 kA nom. 2.7 mils x 2.7 mils 2.7 mils x 2.7 mils 8 mils nominal 16 mils x 16 mils Silox Passivated Electrical Characteristics Parameter TA = 25oC Test conditions Min Max Unit BVCEO IC = 10.0 mA 12 --V dc BVCBO IC = 10 A 20 --V dc BVEBO IE = 10.0 mA 4.5 --V dc ICEX VCE = 10 V, VEB = 2.0 V --5.0 nA hFE1 IC = 1.0 mA dc, VCE = 1.0 V 25 ----hFE2 IC = 10 mA dc, VCE = 1.0 V 40 400 --hFE3 IC = 30 mA dc, VCE = 1.0 V 25 ----VCE(sat) IC = 30 mA dc, IB = 3.0 mA --0.3 V dc Due to limitations of probe testing, only dc parameters are tested. This must be done with pulse width less than 300 s, duty cycle less than 2%. |
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